. Assertion:The energy gap between the valence band and conduction band is greater in silicon than in hermanium.


Reason: Thermal energy produces fewer minority carries in silicon than in germanium.

Best Answer

Solution: The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between calence band and conduction band in silicon is 1.1eV. Also, it is true that thermal energy produces fewer minority carriers in silicon than in germanium.

 

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