. The breakdown in a reverse biased p n junction diode


is more likely to occur due to.

A: large velocity of the minority charge if the doping concentration is small.

B: large velocity of the minority charge carriers if the doping concentration is small.

C: strong electric field in a depletion region if the doping concentration is small.

D: strong electric filed in the deplention region if the doping conentration is large.

 

Best Answer

Answer:

Explanation:

The reverse biasing will take place when the positive side of the battery connected to the N-crystal and the negative terminal is connected to P-crystal

The breakdown can occur when the minority carriers having large velocity but the dopping concentration is small and another condition is when the depletion region is more and doping concentration are large.

Final Answer:

The correct option (A) and (D).

 

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